Method for forming semiconductor device structure

ABSTRACT

A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The first layer is made of a semiconductor material. The method includes forming a stop layer over the first layer. The method includes forming a second layer over the stop layer. The second layer is in direct contact with the stop layer. The method includes removing the second layer. The method includes performing an etching process to remove the stop layer and an upper portion of the first layer. The method includes performing a first planarization process over the first layer.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a Continuation of U.S. application Ser. No.16/027,869, filed on Jul. 5, 2018, now U.S. Pat. No. 10,636,673, whichclaims the benefit of U.S. Provisional Application No. 62/564,396, filedon Sep. 28, 2017, the entirety of which is incorporated by referenceherein.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs. Each generation has smaller and more complexcircuits than the previous generation. However, these advances haveincreased the complexity of processing and manufacturing ICs.

In the course of IC evolution, functional density (i.e., the number ofinterconnected devices per chip area) has generally increased whilegeometric size (i.e., the smallest component or line that can be createdusing a fabrication process) has decreased. This scaling-down processgenerally provides benefits by increasing production efficiency andlowering associated costs.

However, since feature sizes continue to decrease, fabrication processes(e.g. photolithography processes and etching processes) continue tobecome more difficult to perform. Therefore, it is a challenge to formreliable semiconductor devices at smaller and smaller sizes.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1H are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIG. 1B-1 is a perspective view of a polishing apparatus and thesemiconductor device structure of FIG. 1B, in accordance with someembodiments.

FIG. 1E-1 is a perspective view of a polishing apparatus and thesemiconductor device structure of FIG. 1E, in accordance with someembodiments.

FIG. 1H-1 is a top view of the semiconductor device structure of FIG.1H, in accordance with some embodiments.

FIGS. 2A-2B are schematic views of various stages of a process forcleaning a semiconductor device structure, in accordance with someembodiments.

FIG. 3 is a side view of the brushes of FIG. 2 and a tank, in accordancewith some embodiments.

FIGS. 4A-4D are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIG. 4D-1 is a top view of the semiconductor device structure of FIG.4D, in accordance with some embodiments.

FIG. 4D-2 is a cross-sectional view illustrating the semiconductordevice structure along a sectional line I-I′ in FIG. 4D-1, in accordancewith some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the subject matterprovided. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Furthermore, spatially relative terms, such as “beneath,” “below,”“lower,” “above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. It should be understoodthat additional operations can be provided before, during, and after themethod, and some of the operations described can be replaced oreliminated for other embodiments of the method.

The fins may be patterned by any suitable method. For example, the finsmay be patterned using one or more photolithography processes, includingdouble-patterning or multi-patterning processes. Generally,double-patterning or multi-patterning processes combine photolithographyand self-aligned processes, allowing patterns to be created that have,for example, pitches smaller than what is otherwise obtainable using asingle, direct photolithography process. For example, in one embodiment,a sacrificial layer is formed over a substrate and patterned using aphotolithography process. Spacers are formed alongside the patternedsacrificial layer using a self-aligned process. The sacrificial layer isthen removed, and the remaining spacers may then be used to pattern thefins.

FIGS. 1A-1H are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments. As shown in FIG. 1A, a substrate 110 is provided, inaccordance with some embodiments. The substrate 110 has a base portion112 and fin portions 114, in accordance with some embodiments. The finportions 114 are over the base portion 112, in accordance with someembodiments. In some embodiments, the substrate 110 is a bulksemiconductor substrate, such as a semiconductor wafer. For example, thesubstrate 110 is a silicon wafer.

The substrate 110 may include silicon or another elementarysemiconductor material such as germanium. In some other embodiments, thesubstrate 110 includes a compound semiconductor. The compoundsemiconductor may include silicon germanium, gallium arsenide, siliconcarbide, indium arsenide, indium phosphide, another suitable compoundsemiconductor, or a combination thereof.

In some embodiments, the substrate 110 includes asemiconductor-on-insulator (SOI) substrate. The SOI substrate may befabricated using a wafer bonding process, a silicon film transferprocess, a separation by implantation of oxygen (SIMOX) process, anotherapplicable method, or a combination thereof.

In some embodiments, various device elements are formed in and/or overthe substrate 110. The device elements are not shown in figures for thepurpose of simplicity and clarity. Examples of the various deviceelements include transistors, diodes, another suitable element, or acombination thereof.

For example, the transistors may be metal oxide semiconductor fieldeffect transistors (MOSFET), complementary metal oxide semiconductor(CMOS) transistors, bipolar junction transistors (BJT), high-voltagetransistors, high-frequency transistors, p-channel and/or n-channelfield effect transistors (PFETs/NFETs), etc. Various processes areperformed to form the various device elements. The processes may includedeposition, etching, implantation, photolithography, annealing,planarization, one or more other applicable processes, or a combinationthereof.

In some embodiments, isolation features (not shown) are formed in thesubstrate 110. The isolation features are used to define active regionsand electrically isolate various device elements formed in and/or overthe substrate 110 in the active regions. In some embodiments, theisolation features include shallow trench isolation (STI) features,local oxidation of silicon (LOCOS) features, other suitable isolationfeatures, or a combination thereof.

As shown in FIG. 1A, an insulating layer 120 is formed over the baseportion 112 and surrounds the fin portions 114, in accordance with someembodiments. The insulating layer 120 is made of oxide (such as silicondioxide), in accordance with some embodiments. The insulating layer 120is formed by a chemical vapor deposition (CVD) process and an etchingback process, in accordance with some embodiments.

As shown in FIG. 1A, a gate dielectric layer 130 is formed over the finportions 114 and the insulating layer 120, in accordance with someembodiments. The gate dielectric layer 130 conformally covers the finportions 114 and the insulating layer 120, in accordance with someembodiments. The gate dielectric layer 130 is made of silicon dioxide,silicon nitride, silicon oxynitride, a dielectric material with highdielectric constant (high-K), another suitable insulating material, acombination thereof. The gate dielectric layer 130 is formed using achemical vapor deposition process (CVD process), in accordance with someembodiments.

As shown in FIG. 1A, a semiconductor layer 140 is formed over the gatedielectric layer 130, in accordance with some embodiments. Thesemiconductor layer 140 is made of silicon (e.g., polysilicon) oranother elementary semiconductor material such as germanium. In someother embodiments, the semiconductor layer 140 is made of a compoundsemiconductor. The compound semiconductor may include silicon germanium,gallium arsenide, silicon carbide, indium arsenide, indium phosphide,another suitable compound semiconductor, or a combination thereof. Thesemiconductor layer 140 is formed using a chemical vapor depositionprocess, in accordance with some embodiments.

As shown in FIG. 1A, a stop layer 150 is deposited over thesemiconductor layer 140, in accordance with some embodiments. The stoplayer 150 is also referred to as a chemical mechanical polishing (CMP)stop layer or an etching stop layer, in accordance with someembodiments. The stop layer 150 is made of silicon nitride or anothersuitable material. The stop layer 150 is formed using a chemical vapordeposition process or a physical vapor deposition process, in accordancewith some embodiments.

As shown in FIG. 1A, a semiconductor layer 160 is deposited over thestop layer 150, in accordance with some embodiments. The semiconductorlayer 160 is made of silicon (e.g., polysilicon) or another elementarysemiconductor material such as germanium.

In some other embodiments, the semiconductor layer 160 is made of acompound semiconductor. The compound semiconductor may include silicongermanium, gallium arsenide, silicon carbide, indium arsenide, indiumphosphide, another suitable compound semiconductor, or a combinationthereof. The semiconductor layer 160 is formed using a chemical vapordeposition process, in accordance with some embodiments. Thesemiconductor layers 140 and 160 are made of the same material, inaccordance with some embodiments. The stop layer 150 and thesemiconductor layer 160 are made of different materials, in accordancewith some embodiments.

As shown in FIG. 1B, a first planarization process is performed on thesemiconductor layer 160 until the stop layer 150 is exposed, inaccordance with some embodiments. As shown in FIG. 1B, a flat topsurface 162 of the remaining semiconductor layer 160 and a flat topsurface 152 of the stop layer 150 are formed after the firstplanarization process, in accordance with some embodiments.

The flat top surfaces 152 and 162 are substantially coplanar orsubstantially aligned with each other, in accordance with someembodiments. The term “substantially coplanar” in the application mayinclude small deviations from coplanar geometries. The deviations may bedue to manufacturing processes. The first planarization process includesa chemical mechanical polishing process, in accordance with someembodiments.

During the first planarization process, the substrate 110 is flippedupside down, as shown in FIG. 1B-1. As shown in FIGS. 1B and 1B-1, thefirst planarization process uses a polishing apparatus 180 to polish thesemiconductor layer 160, in accordance with some embodiments. Thepolishing apparatus 180 includes a disk-like platen 182, a platen shaft184, a polishing pad 186, and a polishing head 188, in accordance withsome embodiments.

The disk-like platen 182 is rotatable about its central axis, inaccordance with some embodiments. The platen shaft 184 is connected tothe disk-like platen 182, in accordance with some embodiments. Thepolishing pad 186 is affixed onto the disk-like platen 182, inaccordance with some embodiments. The polishing pad 186 is used topolish the semiconductor layer 160, in accordance with some embodiments.

The polishing head 188 is also referred to as a wafer carrier, inaccordance with some embodiments. The polishing head 188 holds thesubstrate 110, and the flat top surface 162 faces the polishing pad 186,in accordance with some embodiments. The polishing head 188 is rotatableabout its central axis, in accordance with some embodiments.

The first planarization process uses a first polishing solution 170 aprovided by a slurry supply N, in accordance with some embodiments. Thefirst polishing solution 170 a is used to mechanically polish thesemiconductor layer 160 so as to remove the semiconductor layer 160, inaccordance with some embodiments. The first polishing solution 170 a isalso referred to as a slurry solution, in accordance with someembodiments.

The first polishing solution 170 a includes an abrasive material and apolymer material, in accordance with some embodiments. The abrasivematerial includes metal elements, metal ions, and/or metal oxides, inaccordance with some embodiments. The abrasive material includes Al, Ni,Fe, Ti, Al₂O₃, NiO, Fe₂O₃, TiO₂, the like, or a combination thereof, inaccordance with some embodiments.

In some embodiments, after the first planarization process, a watercleaning process is performed over the semiconductor device structure100 to remove the first polishing solution 170 a remaining over thesemiconductor device structure 100.

As shown in FIG. 1B, after the first planarization process and the watercleaning process, a portion of the first polishing solution 170 aremains over or in the stop layer 150 and/or the semiconductor layer 160and forms residues 170, in accordance with some embodiments. Theresidues 170 include the polymer material and/or the abrasive material,such as metal elements, metal ions, and/or metal oxides, in accordancewith some embodiments.

As shown in FIG. 1C, a first cleaning process is performed on the stoplayer 150 and the semiconductor layer 160 to remove the residues 170, inaccordance with some embodiments. FIGS. 2A-2B are schematic views ofvarious stages of a process for cleaning a semiconductor devicestructure, in accordance with some embodiments. As shown in FIGS. 1C and2A, the first cleaning process is performed in a cleaning apparatus 200,in accordance with some embodiments.

The cleaning apparatus 200 includes brushes 210 and nozzles 220, inaccordance with some embodiments. The semiconductor device structure 100of FIG. 1C is positioned between the brushes 210 to be cleaned by thebrushes 210, in accordance with some embodiments. Each brush 210 isrotatable about its central axis, in accordance with some embodiments.

In some embodiments, a first cleaning solution 230A is provided on thesemiconductor device structure 100 through the nozzles 220 during thefirst cleaning process. The first cleaning solution 230A includes analkaline solution, in accordance with some embodiments. The alkalinesolution is a weak alkaline solution, for example, of about 0.3 wt % toabout 0.5 wt % NH₄OH, in accordance with some embodiments. The polymermaterial and/or metal oxides of the residues 170 may easily dissolve inthe alkaline solution.

As shown in FIG. 1C, after the first cleaning process, a second cleaningprocess is performed on the stop layer 150 and the semiconductor layer160 to remove the remaining residues 170, in accordance with someembodiments. As shown in FIGS. 1C and 2B, the second cleaning process isperformed in the cleaning apparatus 200, in accordance with someembodiments.

In some embodiments, a second cleaning solution 230B is provided on thesemiconductor device structure 100 through the nozzles 220 during thesecond cleaning process. The second cleaning solution 230B includes achelating agent, in accordance with some embodiments. The chelatingagent is able to capture metal of the residues 170, in accordance withsome embodiments. Therefore, the second cleaning solution 230B with thechelating agent may effectively remove the remaining residues 170,especially of metal-containing residues.

The chelating agent includes citric acid, oxalic ligand acid,ethylenediamine tetraacetic acid (EDTA), etidronic acid(1-hydroxyethane-1,1-diphosphoric acid), the like, or another suitablechelating agent, in accordance with some embodiments. The secondcleaning solution 230B is an acid solution, in accordance with someembodiments. The pH value of the second cleaning solution 230B rangesfrom about 2 to about 4, in accordance with some embodiments. The pHvalue of the second cleaning solution 230B is less than the pH value ofthe first cleaning solution 230A, in accordance with some embodiments.

In some embodiments, after the second cleaning process, a water cleaningprocess is performed over the semiconductor device structure 100 toremove the second cleaning solution 230B remaining over thesemiconductor device structure 100.

FIG. 3 is a side view of the brushes 210 of FIG. 2 and a tank 320, inaccordance with some embodiments. For the sake of simplicity, FIG. 3only shows one of the brushes 210 of FIG. 2. In some embodiments, metalresidues (not shown) coming from other processes remain over the brushes210. Therefore, as shown in FIG. 3, before the first cleaning process,the brushes 210 are soaked in a cleaning solution 310 in the tank 320 toremove metal residues over the brushes 210. The brushes 210 are indirect contact with the cleaning solution 310, in accordance with someembodiments.

The cleaning solution 310 includes a chelating agent, in accordance withsome embodiments. The chelating agent is able to capture metal, inaccordance with some embodiments. Therefore, the cleaning solution 310with the chelating agent may effectively remove metal residues over thebrushes 210.

The chelating agent includes citric acid, oxalic ligand acid,ethylenediamine tetraacetic acid (EDTA), etidronic acid(1-hydroxyethane-1,1-diphosphoric acid), the like, or another chelatingagent suitable to capture metal, in accordance with some embodiments. Insome embodiments, the cleaning solution 310 and the second cleaningsolution 230B of FIG. 2B are made of the same material.

As shown in FIG. 1D, an etching process is performed to remove thesemiconductor layer 160, the stop layer 150, and an upper portion of thesemiconductor layer 140, in accordance with some embodiments. Since someof the residues 170 may remain after the second cleaning process, thestop layer 150 and the upper portion of the semiconductor layer 140under the remaining residues 170 may remain after the etching process.

The remaining residues 170, the remaining stop layer 150, and theremaining upper portion of the semiconductor layer 140 together formprotrusion structures H, in accordance with some embodiments. Theprotrusion structures H are also referred to as humps, in accordancewith some embodiments.

As shown in FIG. 1E, the protrusion structures H are removed by a secondplanarization process, in accordance with some embodiments. Thesemiconductor layer 140 is planarized by the second planarizationprocess, in accordance with some embodiments. Therefore, after thesecond planarization process, a top surface 142 of the semiconductorlayer 140 is a substantially flat surface, in accordance with someembodiments. As a result, the second planarization process improves theyield of subsequent processes (e.g. a photolithography process)performed over the top surface 142, in accordance with some embodiments.

The term “substantially flat surface” in the application may includesmall deviations from flat surface geometries. The deviations may be dueto manufacturing processes. The second planarization process includes achemical mechanical polishing process, in accordance with someembodiments.

During the second planarization process, the substrate 110 is flippedupside down, as shown in FIG. 1E-1. Specifically, the secondplanarization process is performed in a polishing apparatus 190, inaccordance with some embodiments. The polishing apparatus 190 includes adisk-like platen 192, a platen shaft 194, a polishing pad 196, and apolishing head 198, in accordance with some embodiments. The disk-likeplaten 192 is rotatable about its central axis, in accordance with someembodiments.

The platen shaft 194 is connected to the disk-like platen 192, inaccordance with some embodiments. The polishing pad 196 is affixed ontothe disk-like platen 192, in accordance with some embodiments. Thepolishing pad 196 is used to polish the semiconductor layer 140, inaccordance with some embodiments. The polishing pad 196 is also referredto as a buffing pad, in accordance with some embodiments. The polishingpad 196 is a porous polishing pad, in accordance with some embodiments.The polishing pad 196 has pores with an average diameter ranging fromabout 20 μm to about 100 μm, in accordance with some embodiments.

The hardness of the polishing pad 196 is less than the hardness of thepolishing pad 186 of FIG. 1B-1, in accordance with some embodiments.Therefore, the second planarization process uses the soft polishing pad196 to perform a mild polishing process so as to remove the protrusionstructures H and to prevent the top surface 142 of the semiconductorlayer 140 from being scratched, in accordance with some embodiments.

The polishing head 198 is also referred to as a wafer carrier, inaccordance with some embodiments. The polishing head 198 holds thesubstrate 110, and the top surface 142 faces the polishing pad 196, inaccordance with some embodiments. The polishing head 198 is rotatableabout its central axis, in accordance with some embodiments.

The second planarization process uses a second polishing solution Pprovided by the slurry supply N, in accordance with some embodiments.The second polishing solution P is an acid solution or an alkalinesolution, in accordance with some embodiments. The pH value of thesecond polishing solution P ranges from about 1 to about 12.

In some embodiments, the pH value of the second polishing solution Pranges from about 9 to about 13, and metal oxides are dissolved in thesecond polishing solution P. In some embodiments, the pH value of thesecond polishing solution P ranges from about 9 to about 10. In someembodiments, the pH value of the second polishing solution P is lessthan 7, and metal elements are dissolved in the second polishingsolution P.

The second polishing solution P includes a polymer surfactant material,in accordance with some embodiments. The polymer surfactant material mayimprove the hydrophilicity of the semiconductor layer 140. The polymersurfactant material includes an anionic polymer surfactant or a cationicpolymer surfactant, in accordance with some embodiments.

The anionic polymer surfactant includes ammonium polyacrylate, organicamine, or the like, in accordance with some embodiments. The cationicpolymer surfactant includes tetraalkylammonium compounds, such ashexadecyltrimethylammonium bromide, 1-decyltrimethylammonium chloride,or the like, in accordance with some embodiments. The temperature of thesecond polishing solution P is controlled to be in a range from about25° C. to about 40° C. to avoid decreasing the hydrophilicity of thepolymer surfactant, in accordance with some embodiments.

The second polishing solution P does not have abrasive materials, inaccordance with some embodiments. Therefore, the top surface 142 of thesemiconductor layer 140 may be prevented from being scratched byfriction with abrasive materials during the second planarizationprocess.

In some embodiments, an abrasive material concentration of the firstpolishing solution 170 a used by the first planarization process in FIG.1B-1 is greater than an abrasive material concentration of the secondpolishing solution P used by the second planarization process in FIG.1E-1.

The abrasive materials include metal elements (e.g., Al, Ni, Fe, or Ti),metal oxides (e.g., Al₂O₃, NiO, Fe₂O₃, or TiO₂), semiconductor oxides(e.g., SiO₂), the like, and/or another suitable abrasive material.Therefore, the second polishing solution P does not have metal elements,metal oxides, and/or semiconductor oxides, in accordance with someembodiments. The concentration of metal elements, metal oxides, and/orsemiconductor oxides of the second polishing solution P is less than theconcentration of metal elements, metal oxides, and/or semiconductoroxides of the first polishing solution 170 a.

In some embodiments, after the second planarization process, a watercleaning process is performed over the semiconductor device structure100 to remove the second polishing solution P remaining over thesemiconductor device structure 100. In some other embodiments, thesecond cleaning process removes most or all of the remaining residues170, and therefore the second planarization process is not performed.

As shown in FIG. 1F, a hard mask layer 240 is formed over the topsurface 142 of the semiconductor layer 140, in accordance with someembodiments. Since the top surface 142 is a substantially flat surface,a top surface 242 of the hard mask layer 240 is also a substantiallyflat surface, in accordance with some embodiments.

The hard mask layer 240 includes nitrides (e.g., silicon nitride),oxides (e.g., silicon dioxide), or another suitable material. The hardmask layer 240 is formed using a deposition process, such as a chemicalvapor deposition (CVD) process or a physical vapor deposition (PVD)process, in accordance with some embodiments.

As shown in FIG. 1F, a photoresist layer 250 is formed over the hardmask layer 240, in accordance with some embodiments. The formation ofthe photoresist layer 250 includes forming a photoresist material layerover the hard mask layer 240, aligning a photomask (not shown) with thehard mask layer 240 (or the semiconductor layer 140), and exposing anddeveloping the photoresist material layer, in accordance with someembodiments.

Since the top surface 242 of the hard mask layer 240 (or the top surface142 of the semiconductor layer 140) is a substantially flat surface, theyield of the alignment process is improved, in accordance with someembodiments. Therefore, the yield of the exposure process and thedevelopment process performed after the alignment process is alsoimproved, in accordance with some embodiments.

As a result, the formation of the flat top surface 242 and/or 142improves the yield of the formation of the photoresist layer 250, inaccordance with some embodiments. The yield of a subsequent etchingprocess using the photoresist layer 250 as an etching mask is improvedas well, in accordance with some embodiments. The photoresist layer 250(or the photoresist material layer) is made of a photoresist material,such as a photosensitive polymer material, in accordance with someembodiments.

As shown in FIG. 1G, portions of the hard mask layer 240 exposed by thephotoresist layer 250 are removed, in accordance with some embodiments.As shown in FIG. 1G, portions 242 of the hard mask layer 240 areremained after the removal process, in accordance with some embodiments.The removal process includes an etching process, such as a dry etchingprocess, in accordance with some embodiments. The etching process usesthe photoresist layer 250 as an etching mask, in accordance with someembodiments.

FIG. 1H-1 is a top view of the semiconductor device structure 100 ofFIG. 1H, in accordance with some embodiments. FIG. 1H is across-sectional view illustrating the semiconductor device structure 100along a sectional line I-I′ in FIG. 1H-1, in accordance with someembodiments. FIG. 4A is a cross-sectional view illustrating thesemiconductor device structure 100 along a sectional line II-II′ in FIG.1H-1, in accordance with some embodiments.

As shown in FIGS. 1H, 1H-1, and 4A, the photoresist layer 250 isremoved, in accordance with some embodiments. The removal process of thephotoresist layer 250 includes an etching process, such as a wet etchingprocess or a dry etching process, in accordance with some embodiments.

As shown in FIGS. 1H, 1H-1, and 4A, portions of the semiconductor layer140 and the gate dielectric layer 130 under the removed portions of thehard mask layer 240 are removed, in accordance with some embodiments.The removal process of the portions of the semiconductor layer 140 andthe gate dielectric layer 130 includes an etching process, such as a dryetching process, in accordance with some embodiments.

As shown in FIGS. 1H, 1H-1, and 4A, the remaining semiconductor layer140 and the remaining gate dielectric layer 130 under one of theportions 242 of the hard mask layer 240 together form a gate stack G, inaccordance with some embodiments. Each of the gate stacks G under theportions 242 is formed across one or more fin portions 114, inaccordance with some embodiments.

FIGS. 4A-4D are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments. After the step of FIG. 4A, as shown in FIG. 4B, spacers 410are formed over sidewalls of the gate stacks G, in accordance with someembodiments.

The spacers 410 surround the gate stacks G, in accordance with someembodiments. The spacers 410 include an insulating material, such assilicon dioxide or silicon nitride, in accordance with some embodiments.The spacers 410 are formed using a chemical vapor deposition process andan etching process (e.g., a dry etching process), in accordance withsome embodiments.

As shown in FIG. 4B, doped regions 116 are formed in the fin portions114, in accordance with some embodiments. The doped regions 116 areformed in the fin portions 114 exposed by the gate stacks G and thespacers 410, in accordance with some embodiments. The doped regions 116are located at two opposite sides of each of the gate stacks G, inaccordance with some embodiments. Two adjacent of doped regions 116 area source region and a drain region, in accordance with some embodiments.

The doped regions 116 are formed using an ion implantation process, inaccordance with some embodiments. The ion implantation process uses thegate stacks G and the spacers 410 as an ion implantation mask, inaccordance with some embodiments. The ion implantation process isperformed to introduce p-type dopants (e.g., boron) or n-type dopants(e.g., phosphorus) into the fin portions 114, in accordance with someembodiments.

Thereafter, in some embodiments (not shown), stressors are formed in thedoped regions 116 by using suitable processes, in accordance with someembodiments. The suitable processes include, for example, an etchingprocess for removing a portion of the fin portions 114 and a selectiveepitaxial growth (SEG) process. Depending on the desired type of theresulting FinFET device, stressors (e.g., SiGe stressors) applying acompressive stress to channel regions under the gate stacks G orstressors (e.g., SiC stressors) applying a tensile stress to channelregions under the gate stacks G are formed.

As shown in FIG. 4B, a dielectric layer 420 is deposited over theinsulating layer 120, the fin portions 114, the gate stacks G, thespacers 410, and the hard mask layer 240, in accordance with someembodiments. The dielectric layer 420 includes silicon dioxide, siliconoxynitride, borosilicate glass (BSG), phosphoric silicate glass (PSG),borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG),low-k material, porous dielectric material, or combinations thereof, inaccordance with some embodiments. The dielectric layer 420 is depositedusing a CVD process, a HDPCVD process, a spin-on process, a sputteringprocess, or a combination thereof, in accordance with some embodiments.

Afterwards, as shown in FIG. 4B, a planarization process is performed onthe dielectric layer 420 until top surfaces of the gate stacks G areexposed, in accordance with some embodiments. The planarization processincludes a chemical mechanical polishing (CMP) process, in accordancewith some embodiments. After the planarization process is performed, thedielectric layer 420 has a substantially planar top surface tofacilitate subsequent process steps performed thereover.

As shown in FIG. 4C, the gate stacks G are removed, in accordance withsome embodiments. The removal process for removing the gate stacks Gincludes a wet etching process, a dry etching process, or a combinationthereof, in accordance with some embodiments.

As shown in FIG. 4C, after the gate stacks G are removed, trenches T areformed in the spacers 410, in accordance with some embodiments. Thetrenches T pass through the spacers 410 and the dielectric layer 420, inaccordance with some embodiments. The trenches T partially expose thefin portions 114, in accordance with some embodiments.

As shown in FIG. 4C, a gate dielectric layer 430 is formed over bottomsurfaces B of the trenches T, in accordance with some embodiments. Thegate dielectric layer 430 is further formed over inner walls S of thetrenches T, an upper surface 422 of the dielectric layer 420, and thespacers 410, in accordance with some embodiments.

The gate dielectric layer 430 includes a dielectric material, such as ahigh dielectric constant (high-k) material. The high-k material includeshafnium oxide (HfO₂), hafnium silicon dioxide (HfSiO), hafnium siliconoxynitride (HfSiON), hafnium tantalum oxide (HMO), hafnium titaniumoxide (HfTiO), hafnium zirconium oxide (HfZrO), other suitable high-kdielectric materials, or combinations thereof.

The high-k material is made of metal oxides, metal nitrides, metalsilicates, transition metal-oxides, transition metal-nitrides,transition metal-silicates, oxynitrides of metals, aluminum oxide,hafnium dioxide-alumina (HfO₂—Al₂O₃) alloy, other suitable materials, ora combination thereof, in accordance with some embodiments.

The gate dielectric layer 430 is deposited by any suitable process, suchas atomic layer deposition (ALD), chemical vapor deposition (CVD),physical vapor deposition (PVD), sputtering, plating, other suitableprocesses, or combinations thereof, in accordance with some embodiments.In some embodiments, the gate dielectric layer 430 needs to be furtherannealed.

As shown in FIG. 4C, a work function layer 440 is deposited over thegate dielectric layer 430, in accordance with some embodiments. The workfunction layer 440 provides a desired work function for transistors toenhance device performance including improved threshold voltage.

In the embodiments of forming an N-type fin field effect transistor(FinFET), the work function layer 440 can be an n-type metal capable ofproviding a work function value suitable for the device, such as equalto or less than about 4.5 eV. The n-type metal includes metal, metalcarbide, metal nitride, or combinations thereof, in accordance with someembodiments. For example, the n-type metal is made of tantalum, tantalumnitride, or combinations thereof.

On the other hand, in the embodiments of forming a P-type FinFET, thework function layer 440 can be a p-type metal capable of providing awork function value suitable for the device, such as equal to or greaterthan about 4.8 eV. The p-type metal includes metal, metal carbide, metalnitride, other suitable materials, or a combination thereof, inaccordance with some embodiments.

For example, the p-type metal is made of titanium, titanium nitride,other suitable materials, or combinations thereof. The work functionlayer 440 is deposited using a PVD process, CVD process, ALD process,plating process, another suitable method, or combinations thereof, inaccordance with some embodiments.

As shown in FIG. 4C, a gate electrode layer 450 (also called a metalgate electrode layer) is deposited over the work function layer 440 tofill the trenches T, in accordance with some embodiments. The gateelectrode layer 450 includes a suitable metal material, such asaluminum, tungsten, gold, platinum, cobalt, another suitable metal, analloy thereof, or combinations thereof, in accordance with someembodiments. In some embodiments, the gate electrode layer 450 isdeposited using a PVD process, a plating process, the like, orcombinations thereof.

FIG. 4D-1 is a top view of the semiconductor device structure 100 ofFIG. 4D, in accordance with some embodiments. FIG. 4D is across-sectional view illustrating the semiconductor device structure 100along a sectional line II-II′ in FIG. 4D-1, in accordance with someembodiments. FIG. 4D-2 is a cross-sectional view illustrating thesemiconductor device structure 100 along a sectional line I-I′ in FIG.4D-1, in accordance with some embodiments.

As shown in FIGS. 4D, 4D-1, and 4D-2, the gate electrode layer 450, thework function layer 440, and the gate dielectric layer 430 outside ofthe trenches T are removed, in accordance with some embodiments. Theremoval process includes a planarization process, in accordance withsome embodiments.

The planarization process includes a chemical mechanical polishing (CMP)process, in accordance with some embodiments. The gate electrode layer450, the work function layer 440, and the gate dielectric layer 430 inthe trench T together form a gate stack G1, in accordance with someembodiments.

In accordance with some embodiments, methods for forming semiconductordevice structures are provided. The methods (for forming thesemiconductor device structures) include performing an etching processto remove an upper portion of a semiconductor layer. After the etchingprocess, residues over the semiconductor layer and the upper portion ofthe semiconductor layer under the residues remain and together formprotrusion structures. The methods include performing a planarizationprocess over the semiconductor layer to remove the protrusion structuresso as to planarize a top surface of the semiconductor layer. Since theplanarization process improves the flatness of the top surface of thesemiconductor layer, the yield of subsequent processes performed overthe top surface is improved. The methods include performing a cleaningprocess to remove the residues before the etching process so as toprevent or reduce the formation of the protrusion structures.

In accordance with some embodiments, a method for forming asemiconductor device structure is provided. The method includes forminga first layer over a substrate. The first layer is made of asemiconductor material. The method includes forming a stop layer overthe first layer. The method includes forming a second layer over thestop layer. The second layer is in direct contact with the stop layer.The method includes removing the second layer. The method includesperforming an etching process to remove the stop layer and an upperportion of the first layer. The method includes performing a firstplanarization process over the first layer.

In accordance with some embodiments, a method for forming asemiconductor device structure is provided. The method includesproviding a first layer. The method includes forming a second layer overthe first layer. The second layer is made of a semiconductor material.The method includes performing a first planarization process over thesecond layer to remove the second layer. The method includes performinga first cleaning process over the first layer. The method includesperforming an etching process to remove an upper portion of the firstlayer. The method includes performing a second planarization processover the first layer.

In accordance with some embodiments, a method for forming asemiconductor device structure is provided. The method includes forminga first layer over a substrate. The substrate includes a base portionand a fin portion over the base portion, and the first layer covers thefin portion and the base portion. The method includes forming a secondlayer over the first layer. The method includes performing aplanarization process over the second layer to remove the second layer.The method includes performing an etching process to remove an upperportion of the first layer, wherein protrusion structures are formedover a lower portion of the first layer after the etching process. Themethod includes removing the protrusion structures.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for forming a semiconductor devicestructure, comprising: forming a first layer over a substrate, whereinthe first layer is made of a semiconductor material; forming a stoplayer over the first layer; forming a second layer over the stop layer,wherein the second layer is in direct contact with the stop layer;partially removing the second layer; performing an etching process topartially remove the stop layer and an upper portion of the first layer;and performing a first planarization process of the first layer.
 2. Themethod for forming the semiconductor device structure as claimed inclaim 1, wherein the removing of the second layer comprises: performinga second planarization process until the stop layer is exposed.
 3. Themethod for forming the semiconductor device structure as claimed inclaim 2, wherein the first planarization process uses a first polishingsolution, the second planarization process uses a second polishingsolution, and a first abrasive material concentration of the firstpolishing solution is less than a second abrasive material concentrationof the second polishing solution.
 4. The method for forming thesemiconductor device structure as claimed in claim 2, wherein the secondplanarization process uses a polishing solution, and a portion of thepolishing solution remains on or in the stop layer and forms residuesafter the second planarization process.
 5. The method for forming thesemiconductor device structure as claimed in claim 4, whereby protrusionstructures are formed on a lower portion of the first layer as a resultof the etching process.
 6. The method for forming the semiconductordevice structure as claimed in claim 5, wherein the residues, the stoplayer under the residues, and the upper portion of the first layer underthe residues together form the protrusion structures, and the firstplanarization process removes the protrusion structures.
 7. The methodfor forming the semiconductor device structure as claimed in claim 2,wherein the first planarization process comprises a first chemicalmechanical polishing process, and the second planarization processcomprises a second chemical mechanical polishing process, the firstplanarization process uses a first polishing pad to polish the firstlayer, the second planarization process uses a second polishing pad topolish the second layer, and the first polishing pad is softer than thesecond polishing pad.
 8. The method for forming the semiconductor devicestructure as claimed in claim 1, wherein the first layer and the secondlayer are made of a same material, and the stop layer and the secondlayer are made of different materials.
 9. A method for forming asemiconductor device structure, comprising: providing a first layer;forming a second layer over the first layer, wherein the second layer ismade of a semiconductor material; performing a first planarizationprocess to remove an upper portion of the second layer; performing afirst cleaning process; performing an etching process to partiallyremove an upper portion of the first layer; and performing a secondplanarization process of the first layer.
 10. The method for forming thesemiconductor device structure as claimed in claim 9, wherein the firstplanarization process uses a polishing solution comprising an abrasivematerial, a portion of the abrasive material remains on the first layerand forms residues after the first planarization process, and the firstcleaning process removes the residues.
 11. The method for forming thesemiconductor device structure as claimed in claim 9, wherein the firstcleaning process uses a first cleaning solution comprising a firstchelating agent, the first cleaning solution is an acid solution, andthe first chelating agent comprises citric acid, oxalic ligand acid,ethylenediamine tetraacetic acid, or etidronic acid.
 12. The method forforming the semiconductor device structure as claimed in claim 11,wherein the first cleaning process uses a brush, the brush is soaked ina second cleaning solution before the first cleaning process, and thesecond cleaning solution comprises a second chelating agent.
 13. Themethod for forming the semiconductor device structure as claimed inclaim 12, wherein the second chelating agent comprises citric acid,oxalic ligand acid, ethylenediamine tetraacetic acid, or etidronic acid.14. The method for forming the semiconductor device structure as claimedin claim 9, further comprising: after the first planarization processand before the first cleaning process, performing a second cleaningprocess, wherein the second cleaning process uses a cleaning solution,and the cleaning solution is an alkaline solution.
 15. The method forforming the semiconductor device structure as claimed in claim 9,wherein the etching process further removes the second layer remainingover the first layer after the first planarization process.
 16. A methodfor forming a semiconductor device structure, comprising: forming afirst layer over a substrate, wherein the substrate comprises a baseportion and a fin portion over the base portion, and the first layercovers the fin portion and the base portion; forming a second layer overthe first layer; performing a planarization process to remove a portionof the second layer; performing an etching process to remove an upperportion of the first layer, whereby protrusion structures are formedover a lower portion of the first layer by the etching process; andremoving the protrusion structures.
 17. The method for forming thesemiconductor device structure as claimed in claim 16, wherein theplanarization process uses a polishing solution, and the protrusionstructures are composed of residues coming from the polishing solutionand the upper portion of the first layer under the residues.
 18. Themethod for forming the semiconductor device structure as claimed inclaim 17, further comprising: after performing the planarization processand before performing the etching process, performing a first cleaningprocess, wherein the first cleaning process uses a first cleaningsolution comprising a chelating agent.
 19. The method for forming thesemiconductor device structure as claimed in claim 18, furthercomprising: after performing the planarization process and beforeperforming the first cleaning process, performing a second cleaningprocess, wherein the second cleaning process uses a second cleaningsolution, and the second cleaning solution is an alkaline solution. 20.The method for forming the semiconductor device structure as claimed inclaim 16, further comprising: after removing the protrusion structures,forming a mask layer over the first layer, wherein a portion of thefirst layer is not covered by the mask layer; and removing the portionof the first layer.